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agilent mga-71543 low noise amplifier with mitigated bypass switch data sheet description agilents mga-71543 is an economical, easy-to-use gaas mmic low noise amplifier (lna), which is designed for adaptive cdma and w-cdma receiver systems. the mga-71543 is part of the agilent technologies complete cdmadvantage rf chipset. the mga-71543 features a minimum noise figure of 0.8 db and 16 db available gain from a single stage, feedback fet amplifier. the input and output are partially matched, and only a simple series/shunt inductor match is required to achieve low noise figure and vswr into 50 ? . when set into the bypass mode, both input and output are inter- nally matched through a mitigative circuit. this circuit draws no current, yet duplicates the in and out impedance of the lna. this allows the system user to have minimum mismatch change from lna to bypass mode, which is very important when the mga-71543 is used between duplexers and/or filters. the mga-71543 offers an integrated solution of lna with adjustable iip3. the iip3 can be fixed to a desired current level for the receivers linearity requirements. features ? lead-free option available ? operating frequency: 0.1 ghz ~ 6.0 ghz ? noise figure: 0.8 db (nfmin) ? gain: 16 db ? average idd = 2ma in cdma handset ? bypass switch on chip loss = -5.6 db (id < 5 a) iip3 = +35 dbm ? adjustable input ip3: 0 to +9 dbm ? 2.7 v to 4.2 v operation applications ? cdma (is-95, j-std-008) receiver lna ? transmit driver amp ? w-cdma receiver lna ? tdma (is-136) handsets surface mount package sot-343/4-lead sc70 pin connections and package marking the lna has a bypass switch function, which provides low insertion loss at zero current. the bypass mode also boosts dynamic range when high level signal is being received. the mga-71543 is designed for cdma and w-cdma receiver systems. the ip3, gain, and mitigative network are tailored to these applications where filters are used. many cdma systems operate 20% lna mode, 80% bypass. with the bypass current draw of zero and lna of 10 ma, the mga-71543 allows an average 2 ma current. the mga-71543 is a gaas mmic, processed on agilents cost effective phemt (pseudomorphic high electron mobility transistor technology). it is housed in the sot343 (sc70 4-lead) package. 71x rf gnd & v s input & v ref output & v d rf gnd & v s 3 4 1 2 attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class a) esd human body model (class 0) refer to agilent application note a004r: electrostatic discharge damage and control.
2 functional block diagram simplified schematic mga-71543 absolute maximum ratings [1] symbol parameter units absolute operation maximum maximum v d maximum input to output voltage [4] v 5.5 4.2 v c maximum input to ground dc voltage [4] v +.3 +.1 -5.5 -4.2 i d supply current ma 60 50 p d power dissipation [2] mw 240 200 p in cw rf input power dbm +15 +10 t j junction temperature c 170 150 t stg storage temperature c -65 to +150 -40 to +85 thermal resistance: [2, 3] jc = 240 c/w notes: 1. operation of this device in excess of any of these limits may cause permanent damage. 2. ground lead temperature at 25 c. 3. thermal resistance measured by 150 c liquid crystal measurement method. 4. maximum rating assumes other parameters are at dc quiescent conditions. product consistency distribution charts [5,6] notes: 5. distribution data sample size is 450 samples taken from 9 different wafers. future wafers allocated to this product may have nominal values anywhere within the upper and lower specification limits. 6. measurements made on production test board, figure 4. this circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements at 10 ma bias current. rf out switch & bias rf in rf gnd rf gnd & vs output & v d control + + gain fet input & v ref gain (db) frequency figure 1. gain @ 2 ghz, 3v, 10 ma. lsl = 14.4, nominal = 15.9, usl = 17.4 14.4 15.4 16.4 17.4 150 120 90 60 30 0 +3 std cpk = 2.00 std = 0.24 -3 std iip3 (dbm) frequency figure 2. iip3 @ 2 ghz, 3v, 10 ma. lsl = 1.0, nominal = 3.0, usl = 8.0 13 4 5 26 78 150 120 90 60 30 0 +3 std cpk = 1.16 std = 0.96 -3 std nf (db) frequency figure 3. nf @ 2 ghz, 3v, 10 ma. lsl = 0.85, nominal = 1.08, usl = 1.45 0.85 1.05 1.15 1.25 0.95 1.35 1.45 150 120 90 60 30 0 +3 std cpk = 2.33 std = 0.02 -3 std excess circuit losses have been de- embedded from actual measurements. performance may be optimized for different bias conditions and applications. consult application note for details. input r bias v d control 1.5 nh 2.7 nh output 71 evaluation test circuit (single positive bias)
3 mga-71543 electrical specifications t c = +25 c, z o = 50 ? , i d = 10 ma, v d = 3v, unless noted symbol parameter and test condition units min. typ. max. [1] vref test vds = 2.4 v i d = 10 ma v -0.86 -0.65 -0.43 0.041 nf test f = 2.01 ghz v d = 3.0 v (= vds - vref) i d = 10 ma db 1.1 1.45 0.02 gain test f = 2.01 ghz v d = 3.0 v (= vds - vref) i d = 10 ma db 14.4 15.9 17.4 0.24 iip3 test f = 2.01 ghz v d = 3.0 v (= vds - vref) i d = 10 ma dbm 1 3.0 0.96 gain, bypass f = 2.01 ghz vds = 0 v, vref = -3v i d = 0 ma db -6.4 -5.6 0.12 bypass mode [6] ig test bypass mode vds = 0 v, vref = -3 v [6] i d = 0 ma a 2.0 1.5 nfmin [3] minimum noise figure f = 0.9 ghz db 0.7 as measured in figure 5 test circuit f = 1.5 ghz 0.7 ( opt computed from s-parameter and f = 1.9 ghz 0.8 noise parameter performance as measured f = 2.1 ghz 0.8 in a 50 ? impedance fixture) f = 2.5 ghz 0.8 f = 6.0 ghz 1.1 ga [3] associated gain at nfo f = 0.9 ghz db 17.1 as measured in figure 5 test circuit f = 1.5 ghz 16.4 (gopt computed from s-parameter and f = 1.9 ghz 15.8 noise parameter performance as measured f = 2.1 ghz 15.4 in a 50 ? impedance fixture) f = 2.5 ghz 14.9 f = 6.0 ghz 10.0 p1db output power at 1 db gain compression i d = 6 ma dbm +3.0 as measured in evaluation test circuit with i d = 10 ma +7.4 source resistor biasing [4,5] i d = 20 ma +13.1 frequency = 2.01 ghz i d = 40 ma +15.5 iip3 input third order intercept point i d = 6 ma dbm -0.5 as measured in figure 4 test circuit [5] i d = 10 ma +3.0 frequencies = 2.01 ghz, 2.02 ghz i d = 20 ma +7.4 i d = 40 ma +8.7 switch bypass switch rise/fall time (10% - 90%) intrinsic 10 as measured in evaluation test circuit eval circuit ns 100 rlin input return loss as measured in fig. 4 f = 2.01 ghz db 6.0 0.31 rlout output return loss as measured in fig. 4 f = 2.01 ghz db 10.9 0.65 isol isolation |s12| 2 as measured in fig. 5 f = 2.01 ghz db -22.5 notes: 1. standard deviation and typical data based at least 450 part sample size from 9 wafers. future wafers allocated to this produc t may have nominal values anywhere within the upper and lower spec limits. 2. measurements made on a fixed tuned production test circuit (figure 4) that represents a trade-off between optimal noise match , maximum gain match, and a realizable match based on production test board requirements at 10 ma bias current. excess circuit losses have bee n de-embedded from actual measurements. vd=vds-vref where vds is adjusted to maintain a constant vd bias equivalent to a single supply 3v bia s application. consult applications note for circuit biasing options. 3. minimum noise figure and associated gain data computed from s-parameter and noise parameter data measured in a 50 ? system using atn np5 test system. data based on 10 typical parts from 9 wafers. associated gain is the gain when the product input is matched for mi nimum noise figure. 4. p1db measurements were performed in the evaluation circuit with source resistance biasing. as p1db is approached, the drain c urrent is maintained near the quiescent value by the feedback effect of the source resistor in the evaluation circuit. consult applicatio ns note for circuit biasing options. 5. measurements made on a fixed tuned production test circuit that represents a trade-off between optimal noise match, maximum g ain match, and a realizable match based on production test board requirements at 10 ma bias current. performance may be optimized for different bias conditions and applications. consult applications note. 6. the bypass mode test conditions are required only for the production test circuit (figure 4) using the gate bias method. in t he preferred source resistor bias configuration, the bypass mode is engaged by presenting a dc open circuit instead of the bias resistor on pin 4.
4 mga-71543 typical performance t c = 25 c, z o = 50, v d = 3v, i d = 10 ma unless stated otherwise. data vs. frequency was measured in figure 5 test system and was optimized for each frequency with external tuners. figure 4. mga-71543 production test circuit. figure 5. mga-71543 test circuit for s, noise, and power parameters over frequency. rf input v ref 56 pf 960 pf 1.5 nh 2.7 nh 3.9 nh v ds rf output 71 2 1 4 3 56 pf 56 pf rf input bias tee v ds rf output 71 v ref bias tee test fixture 2.7v 3.0v 3.3v frequency (ghz) figure 6. minimum noise figure vs. frequency and voltage. noise figure (db) 1.5 1.3 1.1 0.9 0.7 0.5 06 2 145 3 2.7v 3.0v 3.3v frequency (ghz) figure 7. associated gain with fmin vs. frequency and voltage. associated gain (db) 20 17 14 11 8 5 06 2 145 3 frequency (ghz) figure 8. input third order intercept point vs. frequency and voltage. input ip3 (dbm) 18 15 12 9 6 3 0 -3 06 2 145 3 2.7v 3.0v 3.3v frequency (ghz) figure 9. associated gain with fmin vs. frequency. associated gain (db) 20 17 14 11 8 5 06 2 145 3 -40 c +25 c +85 c frequency (ghz) 500 mhz to 6 ghz figure 10. input third order intercept point vs. frequency and temperature. input ip3 (dbm) 18 15 12 9 6 3 0 -3 06 2 145 3 -40 c +25 c +85 c figure 11. s11 impedance vs. frequency. (m1 = sw, m2 = 6 ma, m3 = 10 ma) m1 m2 m3 figure 12. s22 impedance vs. frequency. (m1 = sw, m2 = 6 ma, m3 = 10 ma) m2 m1 m3 g ass w/fmin minimum frequency (ghz) figure 13. bypass mode associated insertion loss with fmin match and minimum loss vs. frequency. insertion loss (db) 0 -2 -4 -6 -8 -10 06 2 145 3 06 2 145 3 2.7v 3.0v 3.3v frequency (ghz) figure 14. output power at 1 db compression vs. frequency and voltage. [4] op1db (dbm) 18 15 12 9 6 3 0 -3 500 mhz to 6 ghz
5 mga-71543 typical performance, continued t c = 25 c, z o = 50, v d = 3v, i d = 10 ma unless stated otherwise. data vs. frequency was measured in figure 5 test system and was optimized for each frequency with external tuners. frequency (ghz) figure 15. input third order intercept point vs. frequency and current. input ip3 (dbm) 18 15 12 9 6 3 0 -3 06 2 145 3 6 ma 10 ma 20 ma i dsq current (ma) figure 16. output power at 1 db compression vs. i dsq current and temperature (passive bias, v ref fixed) [4] . op1db (dbm) 18 15 12 9 -6 3 0 -3 040 10 30 20 -40 c +25 c +85 c i d current (ma) figure 17. output power at 1 db compression vs. current and temperature (source resistor bias in evaluation circuit) [5] . op1db (dbm) 18 15 12 9 6 3 0 -3 040 10 30 20 -40 c +25 c +85 c i d current (ma) figure 18. minimum noise figure vs. current (2 ghz). nf (db) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 040 10 30 20 i d current (ma) figure 19. gain vs. current and temperature (2 ghz). gain (db) 040 10 30 20 -40 c +25 c +85 c 20 17 14 11 8 5 2 i d current (ma) figure 20. input third intercept point vs. current and temperature (2 ghz). input ip3 (dbm) 040 10 30 20 -40 c +25 c +85 c 12 9 6 3 0 -3 i d current (ma) figure 21. control voltage vs. current. v s (v) 040 10 30 20 1.0 0.8 0.6 0.4 0.2 0 notes: 4. p1db measurements were performed with passive biasing in production test circuit (figure 4.). quiescent drain current, idsq, is set by a fixed vref with no rf drive applied. as p1db is approached, the drain current may increase or decrease depending on frequency and dc bias point which typically results in higher p1db than if the drain current is maintained constant by active biasing. 5. p1db measurements were performed in evaluation test circuit with source resistor biasing which maintains the drain current near the quiescent value under large signal conditions.
6 mga-71543 typical scattering parameters t c = 25 c, v ds = 0v, v ref = -3.0v, i d = 0 ma (bypass mode), z o = 50 ? freq s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 s 21 g max rl in rl out isolation (ghz) mag. ang. mag. ang. mag. ang. mag. ang. (db) (db) (db) (db) (db) 0.1 0.968 -4.5 0.021 41.1 0.021 41.3 0.936 -5.9 -33.6 -12.5 -0.3 -0.6 -33.6 0.2 0.961 -8.4 0.039 70.5 0.039 70.8 0.916 -9.5 -28.2 -9.1 -0.3 -0.8 -28.2 0.3 0.951 -11.4 0.065 73.7 0.064 73.9 0.901 -13.1 -23.7 -6.3 -0.4 -0.9 -23.9 0.4 0.947 -14.8 0.09 70.9 0.09 71 0.89 -16.5 -20.9 -4.2 -0.5 -1.0 -20.9 0.5 0.937 -18.1 0.114 65.7 0.114 65.9 0.871 -20.2 -18.9 -3.6 -0.6 -1.2 -18.9 0.6 0.929 -21.3 0.136 61.4 0.136 61.5 0.861 -23.7 -17.3 -2.8 -0.6 -1.3 -17.3 0.7 0.921 -24.5 0.157 57 0.157 57.1 0.846 -27.1 -16.1 -2.4 -0.7 -1.5 -16.1 0.8 0.913 -27.7 0.176 52.7 0.176 52.8 0.833 -30.3 -15.1 -2.2 -0.8 -1.6 -15.1 0.9 0.905 -30.8 0.194 48.6 0.194 48.7 0.82 -33.3 -14.2 -2.0 -0.9 -1.7 -14.2 1 0.895 -33.7 0.211 44.5 0.211 44.6 0.806 -36.3 -13.5 -1.9 -1.0 -1.9 -13.5 1.1 0.887 -36.6 0.226 40.6 0.226 40.6 0.791 -39.2 -12.9 -1.9 -1.0 -2.0 -12.9 1.2 0.878 -39.4 0.239 36.8 0.239 36.9 0.776 -41.9 -12.4 -2.0 -1.1 -2.2 -12.4 1.3 0.869 -42.1 0.252 33.2 0.252 33.3 0.762 -44.4 -12.0 -2.1 -1.2 -2.4 -12.0 1.4 0.862 -44.7 0.264 29.7 0.263 29.8 0.748 -46.9 -11.6 -2.1 -1.3 -2.5 -11.6 1.5 0.854 -47.3 0.274 26.3 0.274 26.4 0.732 -49.2 -11.2 -2.2 -1.4 -2.7 -11.2 1.6 0.847 -49.8 0.283 23.1 0.283 23.2 0.719 -51.4 -11.0 -2.3 -1.4 -2.9 -11.0 1.7 0.839 -52.4 0.293 19.9 0.292 20 0.705 -53.5 -10.7 -2.4 -1.5 -3.0 -10.7 1.8 0.832 -54.8 0.3 16.8 0.3 16.9 0.692 -55.5 -10.5 -2.5 -1.6 -3.2 -10.5 1.9 0.825 -57.1 0.308 13.8 0.307 14 0.679 -57.6 -10.2 -2.6 -1.7 -3.4 -10.3 2 0.819 -59.5 0.314 11 0.314 11.1 0.665 -59.4 -10.1 -2.7 -1.7 -3.5 -10.1 2.1 0.812 -61.7 0.321 8.1 0.32 8.2 0.653 -61.2 -9.9 -2.8 -1.8 -3.7 -9.9 2.2 0.806 -63.9 0.326 5.3 0.326 5.4 0.639 -63 -9.7 -2.9 -1.9 -3.9 -9.7 2.3 0.8 -66.3 0.331 2.6 0.331 2.7 0.627 -64.6 -9.6 -3.0 -1.9 -4.1 -9.6 2.4 0.792 -68.5 0.336 0 0.336 0.1 0.616 -66.3 -9.5 -3.1 -2.0 -4.2 -9.5 2.5 0.787 -70.9 0.341 -2.7 0.34 -2.5 0.603 -67.8 -9.3 -3.2 -2.1 -4.4 -9.4 3 0.76 -81.8 0.359 -15.1 0.358 -15 0.548 -75.5 -8.9 -3.6 -2.4 -5.2 -8.9 3.5 0.74 -93.4 0.371 -27.1 0.37 -27 0.497 -83.4 -8.6 -3.9 -2.6 -6.1 -8.6 4 0.721 -106 0.377 -39.1 0.377 -39 0.452 -91.6 -8.5 -4.3 -2.8 -6.9 -8.5 4.5 0.708 -119.8 0.379 -51 0.378 -50.9 0.418 -100.7 -8.4 -4.6 -3.0 -7.6 -8.5 5 0.7 -134.7 0.374 -63.2 0.374 -63 0.393 -110.7 -8.5 -4.9 -3.1 -8.1 -8.5 5.5 0.7 -150.2 0.362 -75.2 0.362 -75.1 0.376 -121.1 -8.8 -5.2 -3.1 -8.5 -8.8 6 0.699 -165.1 0.347 -86.7 0.347 -86.5 0.361 -130.9 -9.2 -5.7 -3.1 -8.8 -9.2 6.5 0.705 179.7 0.328 -98.1 0.328 -98 0.35 -141.7 -9.7 -6.1 -3.0 -9.1 -9.7 7 0.708 165.3 0.307 -109.4 0.307 -109.4 0.336 -152 -10.3 -6.7 -3.0 -9.5 -10.3 8 0.705 136.3 0.262 -133.2 0.262 -133.1 0.292 -173.9 -11.6 -8.3 -3.0 -10.7 -11.6 9 0.728 106.4 0.202 -157.3 0.201 -157.2 0.242 156.3 -13.9 -10.4 -2.8 -12.3 -13.9 10 0.781 75 0.141 179.6 0.141 179.8 0.247 114.9 -17.0 -12.7 -2.1 -12.1 -17.0 11 0.815 48.9 0.083 156.7 0.083 156.8 0.306 80.3 -21.6 -16.5 -1.8 -10.3 -21.6 12 0.838 28.2 0.034 134.9 0.034 135.6 0.367 54.2 -29.4 -23.5 -1.5 -8.7 -29.4 13 0.847 8.5 0.005 -22.1 0.005 -19.9 0.414 29.4 -46.0 -39.7 -1.4 -7.7 -46.0 14 0.85 -10.6 0.037 -73.5 0.036 -73.5 0.478 4.7 -28.6 -21.9 -1.4 -6.4 -28.9 15 0.856 -28.5 0.058 -94 0.057 -94.1 0.555 -15.7 -24.7 -17.4 -1.4 -5.1 -24.9 16 0.848 -43.4 0.072 -112.3 0.072 -112.2 0.626 -30.1 -22.9 -15.2 -1.4 -4.1 -22.9 17 0.844 -53.9 0.083 -127.4 0.083 -127.3 0.669 -44 -21.6 -13.6 -1.5 -3.5 -21.6 18 0.873 -65.2 0.088 -145.2 0.088 -144.4 0.706 -58.7 -21.1 -11.9 -1.2 -3.0 -21.1
7 mga-71543 typical scattering parameters and noise parameters t c = 25 c, v ds = 2.25 v, v ref = -0.77 v, i d = 3 ma, z o = 50 ? freq s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 s 21 g max rl in rl out isolation (ghz) mag. ang. mag. ang. mag. ang. mag. ang. (db) (db) (db) (db) (db) 0.3 0.927 -10.1 2.945 170.7 0.028 23.9 0.754 -7.9 9.4 21.6 -0.7 -2.5 -31.1 0.5 0.921 -16.4 2.939 164.1 0.032 32.9 0.744 -12.6 9.4 21.1 -0.7 -2.6 -29.9 0.7 0.915 -22.7 2.907 158.3 0.039 38.7 0.742 -17.5 9.3 20.6 -0.8 -2.6 -28.2 0.9 0.909 -28.8 2.871 152.6 0.047 41.3 0.74 -22.1 9.2 20.2 -0.8 -2.6 -26.6 1.1 0.899 -34.8 2.826 147 0.054 41.5 0.736 -26.7 9.0 19.6 -0.9 -2.7 -25.4 1.3 0.891 -40.5 2.783 141.5 0.062 40.5 0.732 -30.9 8.9 19.1 -1.0 -2.7 -24.2 1.5 0.883 -46.2 2.728 136.3 0.069 38.8 0.727 -34.9 8.7 18.6 -1.1 -2.8 -23.2 1.7 0.873 -51.7 2.693 131.1 0.076 36.7 0.721 -38.7 8.6 18.0 -1.2 -2.8 -22.4 1.9 0.863 -57 2.652 126.1 0.082 34.3 0.716 -42.5 8.5 17.5 -1.3 -2.9 -21.7 2 0.858 -59.7 2.63 123.7 0.086 33 0.711 -44.2 8.4 17.2 -1.3 -3.0 -21.3 2.1 0.852 -62.3 2.609 121.2 0.089 31.7 0.707 -46 8.3 17.0 -1.4 -3.0 -21.0 2.2 0.846 -64.8 2.593 118.7 0.092 30.4 0.703 -47.9 8.3 16.7 -1.5 -3.1 -20.7 2.3 0.841 -67.5 2.579 116.3 0.095 28.9 0.698 -49.5 8.2 16.5 -1.5 -3.1 -20.4 2.4 0.833 -70 2.554 113.9 0.098 27.5 0.695 -51.3 8.1 16.2 -1.6 -3.2 -20.2 2.5 0.828 -72.8 2.544 111.5 0.1 26.1 0.689 -52.9 8.1 15.9 -1.6 -3.2 -20.0 3 0.794 -85.6 2.479 99.7 0.114 18.5 0.66 -61.6 7.9 14.7 -2.0 -3.6 -18.9 3.5 0.758 -99.1 2.43 87.7 0.125 10.7 0.626 -70.5 7.7 13.6 -2.4 -4.1 -18.1 4 0.717 -113.5 2.373 75.6 0.134 2.1 0.587 -80 7.5 12.5 -2.9 -4.6 -17.5 4.5 0.679 -129 2.323 63.1 0.141 -6.4 0.549 -90.3 7.3 11.6 -3.4 -5.2 -17.0 5 0.644 -145.1 2.252 50.5 0.144 -15.4 0.511 -100.9 7.1 10.7 -3.8 -5.8 -16.8 6 0.594 -176.1 2.073 26.9 0.143 -31 0.454 -120.8 6.3 9.2 -4.5 -6.9 -16.9 7 0.565 155 1.885 4.6 0.138 -45.3 0.408 -140.1 5.5 8.0 -5.0 -7.8 -17.2 8 0.536 127 1.715 -16.6 0.126 -58.8 0.344 -157.3 4.7 6.7 -5.4 -9.3 -18.0 9 0.545 99.4 1.611 -37 0.117 -63.7 0.281 -177.8 4.1 6.0 -5.3 -11.0 -18.6 10 0.608 70.4 1.503 -59.7 0.12 -71.8 0.254 145.5 3.5 5.8 -4.3 -11.9 -18.4 11 0.665 46.2 1.332 -82 0.12 -81.5 0.274 106.1 2.5 5.4 -3.5 -11.2 -18.4 12 0.707 27.2 1.167 -101.9 0.119 -90 0.317 75.4 1.3 4.8 -3.0 -10.0 -18.5 13 0.735 8.7 1.03 -121.7 0.12 -99.8 0.356 47.9 0.3 4.2 -2.7 -9.0 -18.4 14 0.76 -9.7 0.904 -142.2 0.122 -110.9 0.421 20.1 -0.9 3.7 -2.4 -7.5 -18.3 15 0.788 -27.4 0.757 -162.1 0.118 -122.8 0.511 -4.1 -2.4 3.1 -2.1 -5.8 -18.6 16 0.802 -42.4 0.609 180 0.115 -134.2 0.6 -21.1 -4.3 2.1 -1.9 -4.4 -18.8 17 0.808 -53.1 0.5 165.7 0.113 -144.3 0.653 -36.7 -6.0 1.0 -1.9 -3.7 -18.9 18 0.845 -64.7 0.429 150.7 0.11 -157.8 0.699 -52.6 -7.4 1.0 -1.5 -3.1 -19.2 freq fmin gamma opt rn/50 ga (ghz) (db) mag ang (db) 0.7 0.88 0.61 16.3 0.45 14.8 0.9 0.87 0.64 22.4 0.43 14.8 1.1 0.9 0.65 28.4 0.44 14.7 1.3 0.92 0.6 33.5 0.43 14.2 1.5 0.95 0.64 37.2 0.42 14.2 1.7 0.95 0.63 40.2 0.41 14 1.9 0.99 0.62 45.4 0.4 13.7 2 1 0.62 47.6 0.4 13.6 2.1 1.02 0.61 49.2 0.4 13.4 2.2 1.03 0.63 50.9 0.39 13.4 2.3 1.03 0.62 53.9 0.38 13.2 2.4 1.04 0.6 55.4 0.37 12.9 2.5 1.04 0.61 57.6 0.37 12.9 3 1.08 0.58 67.9 0.33 12.1 5 1.21 0.49 120 0.14 9.6 6 1.36 0.46 151.2 0.08 8.4
8 mga-71543 typical scattering parameters and noise parameters t c = 25 c, v ds = 2.3 v, v ref = -0.7 v, i d = 6 ma, z o = 50 ? freq s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 s 21 g max rl in rl out isolation (ghz) mag. ang. mag. ang. mag. ang. mag. ang. (db) (db) (db) (db) (db) 0.3 0.911 -11 4.164 170.2 0.026 23.5 0.667 -8.4 12.4 22.6 -0.8 -3.5 -31.7 0.5 0.904 -17.7 4.148 163.3 0.03 32.6 0.658 -13.4 12.4 22.2 -0.9 -3.6 -30.5 0.7 0.896 -24.5 4.094 157.1 0.036 38.5 0.656 -18.5 12.2 21.7 -1.0 -3.7 -28.9 0.9 0.887 -31.2 4.029 151.1 0.043 41 0.654 -23.5 12.1 21.2 -1.0 -3.7 -27.3 1.1 0.875 -37.5 3.953 145.2 0.05 41.3 0.648 -28.2 11.9 20.6 -1.2 -3.8 -26.0 1.3 0.864 -43.7 3.877 139.5 0.057 40.4 0.643 -32.6 11.8 20.0 -1.3 -3.8 -24.9 1.5 0.853 -49.7 3.791 134 0.063 38.8 0.638 -36.8 11.6 19.5 -1.4 -3.9 -24.0 1.7 0.84 -55.6 3.723 128.7 0.069 36.7 0.631 -40.7 11.4 18.9 -1.5 -4.0 -23.2 1.9 0.826 -61.2 3.649 123.4 0.075 34.5 0.624 -44.6 11.2 18.4 -1.7 -4.1 -22.5 2 0.82 -64 3.611 121 0.078 33.3 0.619 -46.4 11.2 18.1 -1.7 -4.2 -22.2 2.1 0.812 -66.7 3.576 118.4 0.081 32.1 0.615 -48.2 11.1 17.8 -1.8 -4.2 -21.8 2.2 0.806 -69.4 3.55 115.7 0.084 30.7 0.609 -50.1 11.0 17.6 -1.9 -4.3 -21.5 2.3 0.797 -72.3 3.511 113.3 0.086 29.4 0.604 -51.7 10.9 17.3 -2.0 -4.4 -21.3 2.4 0.787 -74.9 3.474 110.9 0.089 28.1 0.6 -53.5 10.8 16.9 -2.1 -4.4 -21.0 2.5 0.78 -77.8 3.446 108.3 0.091 26.7 0.593 -55.1 10.7 16.7 -2.2 -4.5 -20.8 3 0.738 -91.2 3.309 96.3 0.102 19.7 0.561 -63.7 10.4 15.5 -2.6 -5.0 -19.8 3.5 0.695 -105.2 3.193 84.2 0.112 12.6 0.523 -72.6 10.1 14.3 -3.2 -5.6 -19.0 4 0.649 -120.2 3.072 72.2 0.119 4.9 0.482 -82 9.7 13.3 -3.8 -6.3 -18.5 4.5 0.609 -136.2 2.962 59.9 0.125 -2.6 0.443 -92.3 9.4 12.4 -4.3 -7.1 -18.1 5 0.573 -152.7 2.83 47.8 0.128 -10.4 0.406 -103 9.0 11.5 -4.8 -7.8 -17.9 6 0.529 175.9 2.555 25 0.13 -23.6 0.352 -123 8.1 10.1 -5.5 -9.1 -17.7 7 0.507 147.2 2.295 3.6 0.129 -36 0.308 -142.4 7.2 8.9 -5.9 -10.2 -17.8 8 0.485 119.4 2.072 -16.8 0.123 -47.7 0.247 -159.2 6.3 7.8 -6.3 -12.1 -18.2 9 0.502 92.5 1.922 -36.5 0.123 -52.7 0.189 178.9 5.7 7.1 -6.0 -14.5 -18.2 10 0.574 65 1.78 -58.3 0.132 -63.1 0.174 132.2 5.0 6.9 -4.8 -15.2 -17.6 11 0.639 42.1 1.576 -79.6 0.134 -75 0.218 88.5 4.0 6.4 -3.9 -13.2 -17.5 12 0.686 23.9 1.388 -98.8 0.136 -85.8 0.272 59.8 2.8 5.9 -3.3 -11.3 -17.3 13 0.715 5.8 1.236 -118.1 0.137 -97.7 0.318 34.5 1.8 5.4 -2.9 -10.0 -17.3 14 0.741 -12 1.094 -138.4 0.137 -110.5 0.388 9.3 0.8 4.9 -2.6 -8.2 -17.3 15 0.774 -29.2 0.926 -158 0.131 -123.3 0.482 -11.4 -0.7 4.4 -2.2 -6.3 -17.7 16 0.789 -43.9 0.761 -175.8 0.125 -135.2 0.57 -26.3 -2.4 3.6 -2.1 -4.9 -18.1 17 0.797 -54.3 0.634 169.4 0.121 -145.5 0.622 -40.6 -4.0 2.5 -2.0 -4.1 -18.3 18 0.833 -65.8 0.549 153.8 0.117 -159 0.67 -55.4 -5.2 2.5 -1.6 -3.5 -18.6 freq fmin gamma opt rn/50 ga (ghz) (db) mag ang (db) 0.7 0.71 0.56 15.7 0.32 16.3 0.9 0.74 0.58 21.8 0.3 16.3 1.1 0.76 0.56 28.3 0.31 15.9 1.3 0.79 0.54 33.8 0.3 15.6 1.5 0.81 0.58 36.5 0.29 15.6 1.7 0.8 0.57 40 0.29 15.3 1.9 0.82 0.57 45.2 0.28 15.1 2 0.83 0.56 47.8 0.28 14.9 2.1 0.85 0.55 49.3 0.28 14.7 2.2 0.85 0.58 50.7 0.27 14.8 2.3 0.87 0.56 53.9 0.26 14.5 2.4 0.87 0.54 55.3 0.26 14.3 2.5 0.88 0.55 57.7 0.26 14.2 3 0.9 0.53 67.7 0.23 13.5 5 1.03 0.42 120.7 0.11 10.7 6 1.14 0.38 152.7 0.07 9.4
9 mga-71543 typical scattering parameters and noise parameters t c = 25 c, v ds = 2.4 v, v ref = -0.6 v, i d = 10 ma, z o = 50 ? freq s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 s 21 g max rl in rl out isolation (ghz) mag. ang. mag. ang. mag. ang. mag. ang. (db) (db) (db) (db) (db) 0.3 0.9 -11.5 5.023 169.8 0.024 23.3 0.608 -8.7 14.0 23.2 -0.9 -4.3 -32.4 0.5 0.892 -18.6 4.993 162.7 0.029 32.4 0.599 -13.8 14.0 22.8 -1.0 -4.5 -30.8 0.7 0.884 -25.7 4.919 156.3 0.034 38.3 0.597 -19.1 13.8 22.4 -1.1 -4.5 -29.4 0.9 0.873 -32.7 4.83 150 0.041 40.9 0.595 -24.2 13.7 21.8 -1.2 -4.5 -27.7 1.1 0.859 -39.4 4.728 143.9 0.047 41.3 0.589 -29.1 13.5 21.2 -1.3 -4.6 -26.6 1.3 0.845 -45.8 4.623 138 0.053 40.5 0.584 -33.6 13.3 20.5 -1.5 -4.7 -25.5 1.5 0.832 -52 4.509 132.4 0.059 39.1 0.578 -37.8 13.1 20.0 -1.6 -4.8 -24.6 1.7 0.816 -58.1 4.412 126.9 0.065 37.2 0.571 -41.8 12.9 19.4 -1.8 -4.9 -23.7 1.9 0.801 -63.9 4.312 121.5 0.07 35 0.563 -45.7 12.7 18.8 -1.9 -5.0 -23.1 2 0.793 -66.8 4.259 119 0.073 33.9 0.558 -47.4 12.6 18.5 -2.0 -5.1 -22.7 2.1 0.784 -69.6 4.211 116.4 0.075 32.7 0.553 -49.2 12.5 18.2 -2.1 -5.1 -22.5 2.2 0.776 -72.4 4.171 113.7 0.078 31.6 0.549 -51 12.4 18.0 -2.2 -5.2 -22.2 2.3 0.767 -75.3 4.117 111.2 0.08 30.3 0.543 -52.7 12.3 17.7 -2.3 -5.3 -21.9 2.4 0.757 -78 4.07 108.7 0.083 29 0.538 -54.5 12.2 17.4 -2.4 -5.4 -21.6 2.5 0.749 -80.9 4.029 106.2 0.085 27.7 0.531 -56 12.1 17.1 -2.5 -5.5 -21.4 3 0.701 -94.7 3.829 94 0.095 21.2 0.499 -64.4 11.7 15.8 -3.1 -6.0 -20.4 3.5 0.655 -108.9 3.659 81.9 0.103 14.7 0.461 -73.1 11.3 14.7 -3.7 -6.7 -19.7 4 0.607 -124.2 3.49 70 0.11 7.6 0.42 -82.2 10.9 13.7 -4.3 -7.5 -19.2 4.5 0.567 -140.4 3.335 58 0.116 0.8 0.382 -92.6 10.5 12.8 -4.9 -8.4 -18.7 5 0.533 -157.2 3.163 46.1 0.12 -6.3 0.346 -103.3 10.0 12.0 -5.5 -9.2 -18.4 6 0.493 171.3 2.828 23.9 0.124 -18.3 0.296 -123.4 9.0 10.6 -6.1 -10.6 -18.1 7 0.476 142.7 2.526 2.9 0.126 -30.1 0.255 -143.1 8.0 9.5 -6.4 -11.9 -18.0 8 0.458 115.1 2.271 -17 0.124 -41.4 0.195 -159.7 7.1 8.3 -6.8 -14.2 -18.1 9 0.48 88.8 2.094 -36.3 0.128 -47.3 0.141 176.8 6.4 7.6 -6.4 -17.0 -17.9 10 0.558 62.2 1.935 -57.6 0.139 -58.9 0.14 120.6 5.7 7.4 -5.1 -17.1 -17.1 11 0.627 39.9 1.712 -78.3 0.142 -71.7 0.2 76.5 4.7 7.0 -4.1 -14.0 -17.0 12 0.675 22.1 1.512 -97.2 0.145 -83.5 0.26 50.1 3.6 6.5 -3.4 -11.7 -16.8 13 0.706 4.4 1.351 -116.2 0.145 -96.3 0.308 26.4 2.6 6.0 -3.0 -10.2 -16.8 14 0.732 -13.3 1.2 -136.2 0.145 -109.7 0.379 3.1 1.6 5.6 -2.7 -8.4 -16.8 15 0.767 -30.2 1.022 -155.6 0.137 -123.1 0.473 -15.8 0.2 5.1 -2.3 -6.5 -17.3 16 0.783 -44.7 0.849 -173.3 0.131 -135.2 0.558 -29.5 -1.4 4.3 -2.1 -5.1 -17.7 17 0.792 -55.1 0.713 171.8 0.126 -145.7 0.609 -43 -2.9 3.4 -2.0 -4.3 -18.0 18 0.828 -66.5 0.622 156 0.122 -159.2 0.656 -57.3 -4.1 3.3 -1.6 -3.7 -18.3 freq fmin gamma opt rn/50 ga (ghz) (db) mag ang (db) 0.7 0.63 0.53 15.3 0.27 17.2 0.9 0.66 0.54 21.4 0.26 17.1 1.1 0.68 0.55 28.5 0.26 16.9 1.3 0.7 0.52 33.8 0.25 16.5 1.5 0.72 0.55 37 0.25 16.4 1.7 0.72 0.56 39.9 0.25 16.2 1.9 0.73 0.53 45.5 0.24 15.8 2 0.74 0.53 48.3 0.23 15.6 2.1 0.76 0.52 49.6 0.23 15.4 2.2 0.78 0.54 50.7 0.23 15.4 2.3 0.78 0.53 54 0.22 15.2 2.4 0.79 0.51 55.6 0.22 15 2.5 0.8 0.52 57.6 0.22 14.9 3 0.82 0.5 67.5 0.2 14.2 5 0.94 0.38 121.3 0.1 11.2 6 1.05 0.34 155 0.07 10
10 mga-71543 typical scattering parameters and noise parameters t c = 25 c, v ds = 2.5 v, v ref = -0.5 v, i d = 20 ma, z o = 50 ? freq s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 s 21 g max rl in rl out isolation (ghz) mag. ang. mag. ang. mag. ang. mag. ang. (db) (db) (db) (db) (db) 0.3 0.889 -12.1 5.952 169.3 0.023 22.8 0.541 -9 15.5 23.8 -1.0 -5.3 -32.8 0.5 0.88 -19.5 5.901 162 0.027 32 0.532 -14.1 15.4 23.3 -1.1 -5.5 -31.4 0.7 0.87 -27 5.803 155.3 0.032 38.2 0.531 -19.6 15.3 22.9 -1.2 -5.5 -29.9 0.9 0.858 -34.3 5.684 148.8 0.037 40.9 0.528 -24.7 15.1 22.3 -1.3 -5.5 -28.6 1.1 0.842 -41.2 5.548 142.5 0.043 41.5 0.523 -29.7 14.9 21.6 -1.5 -5.6 -27.3 1.3 0.826 -47.9 5.407 136.5 0.049 40.9 0.518 -34.2 14.7 21.0 -1.7 -5.7 -26.2 1.5 0.81 -54.3 5.26 130.6 0.055 39.6 0.511 -38.4 14.4 20.4 -1.8 -5.8 -25.2 1.7 0.792 -60.7 5.126 125 0.06 38 0.505 -42.4 14.2 19.8 -2.0 -5.9 -24.4 1.9 0.774 -66.6 4.99 119.5 0.065 36.1 0.497 -46.2 14.0 19.2 -2.2 -6.1 -23.7 2 0.765 -69.6 4.922 116.9 0.067 35 0.493 -47.9 13.8 18.9 -2.3 -6.1 -23.5 2.1 0.755 -72.5 4.857 114.3 0.069 34 0.488 -49.6 13.7 18.6 -2.4 -6.2 -23.2 2.2 0.746 -75.4 4.797 111.5 0.072 32.9 0.483 -51.5 13.6 18.3 -2.5 -6.3 -22.9 2.3 0.736 -78.3 4.729 109 0.074 31.8 0.477 -53 13.5 18.0 -2.7 -6.4 -22.6 2.4 0.724 -81 4.668 106.5 0.076 30.6 0.473 -54.7 13.4 17.7 -2.8 -6.5 -22.4 2.5 0.716 -84 4.612 103.9 0.078 29.4 0.467 -56.2 13.3 17.5 -2.9 -6.6 -22.2 3 0.664 -98 4.34 91.7 0.087 23.6 0.435 -64.1 12.7 16.2 -3.6 -7.2 -21.2 3.5 0.616 -112.4 4.107 79.7 0.095 17.8 0.399 -72.4 12.3 15.1 -4.2 -8.0 -20.4 4 0.566 -128 3.886 67.9 0.102 11.3 0.36 -81.1 11.8 14.1 -4.9 -8.9 -19.8 4.5 0.528 -144.5 3.686 56.1 0.108 5.1 0.324 -91.4 11.3 13.2 -5.5 -9.8 -19.3 5 0.495 -161.5 3.473 44.5 0.113 -1.3 0.291 -102.1 10.8 12.4 -6.1 -10.7 -18.9 6 0.46 166.9 3.078 22.8 0.119 -12.5 0.245 -122.3 9.8 11.1 -6.7 -12.2 -18.5 7 0.448 138.5 2.737 2.4 0.124 -24.1 0.208 -142.5 8.7 9.9 -7.0 -13.6 -18.1 8 0.436 111.1 2.452 -17.1 0.125 -35.3 0.15 -158.6 7.8 8.8 -7.2 -16.5 -18.1 9 0.462 85.4 2.252 -36 0.133 -42.2 0.099 175.9 7.1 8.1 -6.7 -20.1 -17.5 10 0.544 59.7 2.075 -56.8 0.146 -54.9 0.114 106.8 6.3 7.9 -5.3 -18.9 -16.7 11 0.617 38.1 1.836 -77.2 0.15 -68.5 0.191 65.3 5.3 7.5 -4.2 -14.4 -16.5 12 0.668 20.6 1.626 -95.6 0.153 -81 0.256 41.5 4.2 7.1 -3.5 -11.8 -16.3 13 0.7 3.1 1.457 -114.4 0.153 -94.4 0.305 19.4 3.3 6.6 -3.1 -10.3 -16.3 14 0.728 -14.4 1.299 -134.1 0.153 -108.4 0.377 -2.4 2.3 6.2 -2.8 -8.5 -16.3 15 0.763 -31.2 1.111 -153.3 0.144 -122.2 0.469 -19.6 0.9 5.8 -2.3 -6.6 -16.8 16 0.78 -45.5 0.93 -170.8 0.137 -134.6 0.552 -32.5 -0.6 5.0 -2.2 -5.2 -17.3 17 0.789 -55.8 0.788 174.2 0.132 -145.3 0.599 -45.4 -2.1 4.1 -2.1 -4.5 -17.6 18 0.825 -67.1 0.691 158.3 0.126 -159 0.645 -59 -3.2 4.1 -1.7 -3.8 -18.0 freq fmin gamma opt rn/50 ga (ghz) (db) mag ang (db) 0.7 0.59 0.52 15.7 0.25 18.1 0.9 0.64 0.53 21.7 0.24 17.9 1.1 0.66 0.53 28.9 0.24 17.7 1.3 0.68 0.51 34.2 0.23 17.3 1.5 0.68 0.54 38.5 0.23 17.2 1.7 0.69 0.54 40.8 0.23 17 1.9 0.72 0.51 46.4 0.22 16.5 2 0.73 0.51 48.8 0.22 16.4 2.1 0.74 0.5 50.5 0.21 16.2 2.2 0.75 0.51 52.4 0.21 16.1 2.3 0.76 0.51 55.4 0.2 15.9 2.4 0.77 0.48 56.3 0.2 15.6 2.5 0.79 0.5 59 0.2 15.6 3 0.82 0.47 68.6 0.18 14.7 5 0.93 0.34 125.1 0.09 11.7 6 1.06 0.31 160.6 0.07 10.5
11 mga-71543 typical scattering parameters and noise parameters t c = 25 c, v ds = 2.7 v, v ref = -0.3 v, i d = 40 ma, z o = 50 ? freq s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 s 21 g max rl in rl out isolation (ghz) mag. ang. mag. ang. mag. ang. mag. ang. (db) (db) (db) (db) (db) 0.3 0.889 -12.3 6.174 169.2 0.022 22.3 0.508 -8.9 15.8 23.9 -1.0 -5.9 -33.2 0.5 0.88 -19.8 6.117 161.8 0.025 31.6 0.501 -13.7 15.7 23.5 -1.1 -6.0 -32.0 0.7 0.87 -27.4 6.012 155.1 0.029 37.9 0.499 -19.1 15.6 23.0 -1.2 -6.0 -30.8 0.9 0.857 -34.9 5.885 148.5 0.035 40.9 0.497 -24.2 15.4 22.4 -1.3 -6.1 -29.1 1.1 0.841 -41.9 5.74 142.1 0.04 41.7 0.493 -29 15.2 21.7 -1.5 -6.1 -28.0 1.3 0.823 -48.7 5.589 136 0.046 41.4 0.488 -33.4 14.9 21.0 -1.7 -6.2 -26.7 1.5 0.807 -55.2 5.435 130.2 0.051 40.2 0.483 -37.5 14.7 20.4 -1.9 -6.3 -25.8 1.7 0.788 -61.6 5.289 124.5 0.055 38.7 0.477 -41.3 14.5 19.8 -2.1 -6.4 -25.2 1.9 0.769 -67.6 5.145 119 0.06 37 0.47 -45 14.2 19.2 -2.3 -6.6 -24.4 2 0.76 -70.6 5.072 116.3 0.062 36.1 0.466 -46.5 14.1 18.9 -2.4 -6.6 -24.2 2.1 0.75 -73.5 5.003 113.7 0.064 35.1 0.462 -48.2 14.0 18.6 -2.5 -6.7 -23.9 2.2 0.739 -76.3 4.93 111 0.066 34.2 0.458 -50 13.9 18.3 -2.6 -6.8 -23.6 2.3 0.73 -79.4 4.865 108.4 0.068 33.1 0.452 -51.4 13.7 18.0 -2.7 -6.9 -23.3 2.4 0.718 -82.2 4.801 105.9 0.07 32 0.448 -53 13.6 17.7 -2.9 -7.0 -23.1 2.5 0.709 -85.2 4.739 103.3 0.072 30.9 0.442 -54.5 13.5 17.5 -3.0 -7.1 -22.9 3 0.656 -99.3 4.447 91 0.081 25.5 0.413 -61.9 13.0 16.2 -3.7 -7.7 -21.8 3.5 0.608 -113.8 4.197 79 0.089 20 0.38 -69.7 12.5 15.1 -4.3 -8.4 -21.0 4 0.559 -129.5 3.963 67.3 0.095 14 0.344 -77.9 12.0 14.1 -5.1 -9.3 -20.4 4.5 0.521 -146 3.751 55.6 0.101 8.2 0.31 -87.7 11.5 13.3 -5.7 -10.2 -19.9 5 0.49 -163 3.53 44.1 0.106 2 0.278 -98 11.0 12.5 -6.2 -11.1 -19.5 6 0.457 165.4 3.124 22.5 0.114 -8.6 0.236 -117.5 9.9 11.2 -6.8 -12.5 -18.9 7 0.447 137.1 2.776 2.2 0.12 -19.8 0.201 -137.1 8.9 10.0 -7.0 -13.9 -18.4 8 0.436 109.8 2.484 -17.2 0.122 -30.9 0.146 -151.4 7.9 8.9 -7.2 -16.7 -18.3 9 0.462 84.5 2.28 -36 0.132 -37.8 0.096 -173.8 7.2 8.2 -6.7 -20.4 -17.6 10 0.546 59.1 2.102 -56.7 0.146 -50.8 0.101 112 6.5 8.0 -5.3 -19.9 -16.7 11 0.621 37.8 1.861 -77 0.152 -64.7 0.177 66.8 5.4 7.6 -4.1 -15.0 -16.4 12 0.672 20.3 1.649 -95.4 0.155 -77.6 0.244 42.3 4.3 7.2 -3.5 -12.3 -16.2 13 0.705 2.9 1.478 -114.1 0.157 -91.3 0.293 19.8 3.4 6.8 -3.0 -10.7 -16.1 14 0.733 -14.6 1.32 -133.9 0.157 -105.8 0.366 -2.2 2.4 6.4 -2.7 -8.7 -16.1 15 0.768 -31.3 1.129 -153.1 0.149 -119.7 0.461 -19.1 1.1 6.0 -2.3 -6.7 -16.5 16 0.786 -45.7 0.946 -170.6 0.141 -132.5 0.545 -32.1 -0.5 5.2 -2.1 -5.3 -17.0 17 0.794 -56.1 0.801 174.5 0.136 -143.6 0.595 -45.1 -1.9 4.3 -2.0 -4.5 -17.3 18 0.83 -67.4 0.703 158.5 0.131 -157.4 0.641 -58.8 -3.1 4.3 -1.6 -3.9 -17.7 freq fmin gamma opt rn/50 ga (ghz) (db) mag ang (db) 0.7 0.69 0.56 17.3 0.32 18.5 0.9 0.73 0.57 23.9 0.3 18.3 1.1 0.73 0.56 30.8 0.31 18 1.3 0.77 0.54 36.5 0.3 17.6 1.5 0.77 0.58 40.7 0.29 17.6 1.7 0.8 0.57 43.9 0.29 17.3 1.9 0.83 0.55 49.7 0.28 16.9 2 0.85 0.54 52.1 0.27 16.7 2.1 0.86 0.54 54.3 0.27 16.5 2.2 0.9 0.54 55.5 0.26 16.4 2.3 0.91 0.54 59.3 0.26 16.2 2.4 0.91 0.52 61 0.25 16 2.5 0.93 0.52 63.2 0.25 15.8 3 0.98 0.49 74.7 0.22 15 5 1.19 0.37 136 0.1 11.9 6 1.35 0.35 172.8 0.08 10.7
12 he d a2 a1 b b1 e 1.30 (.051) bsc 1.15 (.045) bsc c l a dimensions (mm) min. 1.15 1.85 1.80 0.80 0.80 0.00 0.25 0.55 0.10 0.10 max. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.70 0.20 0.46 symbol e d he a a2 a1 b b1 c l notes: 1. all dimensions are in mm. 2. dimensions are inclusive of plating. 3. dimensions are exclusive of mold flash & metal burr. 4. all specifications comply to eiaj sc70. 5. die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. package surface to be mirror finish. package dimensions outline 43 sot-343 (sc70 4-lead) part number ordering information no. of part number devices container mga-71543-tr1 3000 7" reel mga-71543-tr2 10000 13" reel mga-71543-blk 100 antistatic bag mga-71543-tr1g 3000 7" reel mga-71543-tr2g 10000 13" reel mga-71543-blkg 100 antistatic bag note: for lead-free option, the part number will have the character g at the end.
13 user feed direction cover tape carrier tape reel end view 8 mm 4 mm top view 71 71 71 71 p p 0 p 2 f w c d 1 d e a 0 10 max. t 1 (carrier tape thickness) t t (cover tape thickness) 10 max. b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.40 0.10 2.40 0.10 1.20 0.10 4.00 0.10 1.00 + 0.25 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 cavity diameter pitch position d p 0 e 1.55 0.10 4.00 0.10 1.75 0.10 0.061 + 0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 + 0.30 - 0.10 0.254 0.02 0.315 + 0.012 0.0100 0.0008 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance width tape thickness c t t 5.40 0.10 0.062 0.001 0.205 + 0.004 0.0025 0.0004 cover tape device orientation tape dimensions for outline 4t
14 designing with mga-71543, a low noise amplifier with built-in mitigated bypass switches introduction the mga-71543 is a single stage gaas rfic low noise amplifier with an integrated bypass switch (figure 1). rf out switch & bias rf in figure 1. mga-71543 functional diagram. this application note describes a low noise amplifier design using agilent technologies mga-71543. the mga-71543 is designed for receivers and transmitters operat- ing from 100 mhz to 6 ghz, mainly for cdma applications i.e. is-95 cdma1900, cdma800 and w-cdma. it can be used as a first stage (q1) in a cdma pcs 1900 mhz application currently filled by a single transistor. its bypass capability adds features over the single transistor solution with no performance loss. the device can also be used as a driver amplifier for cdma800. the purpose of the switch feature is to prevent distortion of high signal levels in receiver applica- tions by bypassing the amplifier. furthermore, zero current draw, when in bypass mode, saves current thus improving battery life. the internally matched switching circuit provides a 20 db gain step and also reduces gain ripple and mismatch in system usage. the mga-71543 is a small lna/ bypass switch mmic that pro- vides a low noise figure, a high gain and high third order input intercept point (iip3) ideal for the first stage lna of pcs cdma and w-cdma. device description the mga-71543 is a single stage gaas ic with a built-in bypass switch housed in a sot-343 package. the device diagram is shown in figures 1 and 2. rf out amplifier mode bypass mode rf in figure 2. simplified schematic. gnd gnd & vc output & v d control + + gain fet input & dc ref figure 3. bypass state duplicates the in and out impedance. the mga-71543 features a mini- mum noise figure of 0.8 db and 16 db available gain. the input and output are partially matched, and only a simple series/shunt inductor match is required to achieve low noise figure and vswr into 50 ? . when set into the bypass mode, both input and output are inter- nally matched through a mitigative circuit. this circuit draws no current (less than 2 a), yet duplicates the in and out imped- ance of the lna (figure 3). this allows the system user to have minimum mismatch change from lna to bypass mode, thus allow- ing the same matching network at both states (lna state and bypass state). this makes the mga-71543 ideal for use between duplexers and image reject filters. the mga-71543 offers an inte- grated solution of lna with adjustable iip3. the iip3 can be fixed to a desired current level for the receivers linearity require- ments. the lna has a bypass switch function, which sets the current to zero (2 a) and pro- vides low insertion loss when in bypass mode. the bypass mode also boosts dynamic range when high level signal is being received. many cdma systems operate 20% lna and 80% bypass mode. for example, with the bypass draw of zero and lna of 10 ma, the mga-71543 allows an average of only 2 ma current. the mga-71543 is a gaas mmic, processed on agilents cost effective phemt (pseudomorphic high electron mobility transistor technology). it is housed in the sot343 (sc70 4-lead) package. biasing this ic can be biased like a depletion mode discrete gaasfet. two kinds of passive biasing can be used: gate bias (figure 4) and source resistor bias method (figure 6). gate bias pins 1 and 4 (figure 4) are dc grounded and a negative bias voltage is applied to pin 3 in addition to the power supply (2.7 or 3 v) applied to pin 2. this method of biasing has the advan- tage of minimizing parasitic source inductance because the device is directly dc and rf grounded.
15 v ref output & v d input 71 2 1 4 3 figure 4. gate bias method. the dc supply at the input terminal (v ref ) can be applied through a rf choke (inductor). the voltage at v ref (pin 3) with respect to ground determines the device current, i d . a plot of typical i d vs. v ref is shown in figure 5. maximum device current (approximately 60 ma) occurs at v ref = 0 (i.e. v gs = 0). when using the gate biasing method, the bypass mode is activated when v ds = 0v and v ref < -2v. v ref (v) i d (ma) -1 70 60 50 40 30 20 10 0 -0.6 -0.8 -0.4 -0.2 figure 5. device current vs. v ref . this kind of biasing would not usually be used unless a negative supply voltage was readily available. source resistor bias this is the recommended method because it only requires one (positive) power supply. as shown in figure 6, pin 3 is dc grounded and pins 1 and 4 are rf bypassed. the current of the amplifier (i d ) is set by the value of the resistor r bias . this resistor (r bias ) is connected at pin 4 as shown in figure 6 and rf bypassed. at least two capacitors in parallel are recommended for rf bypassing. one capacitor (100 pf) for high frequency bypassing and a second, large value capacitor for better low frequency bypassing. the large value capacitor is added in parallel to improve the ip3 because they help ground the low frequency mixing terms that are generated during a two tones test (i.e. f 1 C f 2 term which is the separation of the two tones usually 1 to a few mhz) and thus improve the iip3. input output & v d r bias 71 2 1 4 3 figure 6. source resistor bias method. maximum current (about 60 ma) occurs when r bias =0. a plot of typical i d vs. r bias is shown in figure 7. 0 10 60 50 40 30 20 040 20 60 80 100 140 120 i d (ma) r bias ( ? ) figure 7. device current vs. r bias . the approximate value of the external resistor, r bias , may also be calculated from: r bias = 964 (1 C 0.112 i d ) i d where r bias is in ohms and i d is the desired device current in ma. a simple method for dc ground- ing the input terminal (pin 3) is to use a shunt inductor that is also part of the noise-matching network. adaptive biasing for applications in which input power levels vary over a wide range, it may be useful to dynami- cally adapt the bias of the mga-71543 to match the signal level. a sensor senses the signal level at some point in the system (usually in the baseband circuitry) and automatically adjusts the bias current of the amplifier accord- ingly. the main advantage of adaptive biasing is conservation of supply current (longer battery life) by using only the amount of current necessary to handle the input signal without distortion. adaptive biasing of the mga-71543 can be accomplished by simple digital means (figure 8). for instance simple electronic switches can be used to control the value of the source resistor in discrete increment. digital control 3 dc return path 2 4 1 figure 8. adaptive bias control using digital method.
16 applying the device voltage common to all methods of biasing, voltage v d is applied to the mga-71543 through the rf output connection (pin 2). the bias line is capacitively bypassed to keep rf from the dc supply lines and prevent resonant dips or peaks in the response of the amplifier. where practical, it may be cost effective to use a length of high impedance transmission line (usually / 4 line) in place of the rfc. when using the gate bias method , the applied device voltage, v ds , is equal to voltage v d (at pin 2) since v s is zero. rf output v d ~ +2.5 v vref = -0.5 v rf input 71 3 2 4 1 figure 9. dc schematic for gate bias. for source resistor biasing method , the applied device voltage, v ds , is v d C v s . the bias control voltage is v s (pin 4) which is set by the external bias resistor. a source resistor bias circuit is shown in figure 10. rf output v d = +3 v r bias rf input 71 3 2 4 1 figure 10. dc schematic for source bias. controlling the switch the device current controls the state of the mga-71543 (amplifier or bypass mode). for device currents greater than 3 ma, it functions as an amplifier. if a lower current is drawn, the gain of the amplifier is significantly reduced and the performance will degrade. if the device current is set to zero, the mga-71543 is switched into a bypass mode in which the signal is routed around the amplifier with a loss of about 5.6 db. the simplest way of switching the mga-71543 to the bypass mode is to open-circuit the terminals at pins 1 and 4. the bypass mode is also set by increasing the source resistance r bias to greater than 1m ? . with the dc ground con- nection open, the internal control circuit of the mga-71543 auto- switches from amplifier mode into a bypass mode and the device current drops to near zero. typical bypass mode current is 2 a. 32 4 1 r bias bypass switch enable figure 11. mga-71543 amplifier/bypass state switching. a digital switch can be used to control the amplifier and bypass state as shown in figure 11. switching speed the speed at which the mga-71543 switches between states is extremely fast. the intrinsic switching speed is typically around 10 ns. however in practical circuits, the switching speed is limited by the time constants of the external bias circuit components (current setting resistor and bypass capacitors). these external components increase the switch- ing time to around 100ns. further- more, the switching on time is slightly lower (faster) than the switching off time (i.e. it switches on faster). thermal issues the mean time to failure (mttf) of semiconductors is inversely proportional to the operating temperature. when biased at 3v and 10 ma for lna applications, the power dissipation is 3v x 10 ma = 30 mw. the temperature increment from the rfic channel to its case is then 30 mw x jc = 0.030 watt x 240 c/watt = 7.2 c. subtracting the channel-to-case temperature rise from the suggested maximum junction temperature of 150 c, the resulting maximum allowable case temperature is 143 c. the worst case thermal situation occurs when the mga-71543 is operated at its maximum operat- ing conditions in an effort to maximize output power or achieve minimum distortion. a similar calculation for the maximum operating bias of 4.2 volts and 50 ma yields a maximum allow- able case temperature of 100 c. (i.e. 210 mw x jc = 0.210 watt x 240 c/watt = 50.4 c 150 c C 50.4 c = 100 c.) this calculation assumes the worst case of no rf power being extracted from the device. when operated in a saturated mode, both power-added efficiency and the maximum allowable case temperature will increase. note: case temperature for surface mount packages such as the sot-343 refers to the interface between the package pins and the
17 mounting surface, i.e., the tem- perature at the pcb mounting pads. the primary heat path from the rfic chip to the system heatsink is by means of conduc- tion through the package leads and ground vias to the ground plane of the pcb. grounding consideration in pcb layout the mga-71543 requires careful attention during grounding. any device with gain can be made to oscillate if feedback is added. since poor grounding adds series feedback, it can cause the device to oscillate. poor grounding is one of the most common causes of oscillation in rf components. careful attention should be used when rf bypassing the ground terminals when the device is biased using the source resistor method. package footprint the pcb pad print for the minia- ture, 4-lead sot-343 (sc70) package is shown in figure 12. 1.30 0.051 0.60 0.024 .090 0.035 dimensions in inches mm 1.15 0.045 2.00 0.079 1.00 0.039 figure 12. recommended pcb pad layout for agilents sc70 4l/sot-343 products. the layout is shown with a footprint of the mga-71543 superimposed on the pcb pads for reference. rf bypass for layouts using the source resistor method of biasing, both of the ground terminals of the mga-71543 must be well bypassed to maintain device stability. beginning with the package pad print in figure 12, and rf layout similar to the one shown in figure 13 is a good starting point for using the mga-71543 with capacitor-bypassed ground terminals. it is a best practice to use multiple vias to minimize overall ground path inductance. 71 size 0402 recommended for the bypass capacitors figure 13. layout for rf bypass. pcb materials 0.031 inches thick of fr-4 or g-10 type dielectric materials are typical choices for most low cost wireless applications using single layer printed boards. as an alternative, a getek material with a multilayer printed circuit board can be used for a smaller size board, where: 1 st layer: rf routing layer 2 nd layer: ground layer 3 rd layer: power (dc) routing layer 4 th layer: other rf routing layer the spacing between the layers is as follows: between the 1 st and 2 nd : 0.005" between the 2 nd and 3 rd : 0.020" between the 3 rd and 4 th : 0.005" lna application in the following sections the lna design is described in a more general way. sample evaluation boards for 1900 mhz and 800 mhz are shown in a table (table 1) and the appropriate board diagram is shown (figures 22 and 23). a second smaller size board is also shown (figures 25 and 26) with the corresponding table (table 2). the smaller board is an example of reducing the size of the layout, more suitable for handset manu- facturers. for low noise amplifier application, the lna is typically biased 6 to 20 ma. the mga-71543 is a conditionally stable device, therefore, the proper input and output loads must be presented in addition to properly rf grounding the device. please refer to the stability section for tips on preventing oscillation. the lna can be switched on or off by a simply varying the resistor to its ground leads as described in previous sections. matching networks for the lna lna in l s or o p t opt 50 ? 50 ? output match input match figure 14. input and output matching terminology. the input matching network determines the noise figure and return loss (s11) of our amplifier. the output-matching network determines the ip3 and output return loss (s22). furthermore, both input and output matching networks influence the gain. the best gain (maximum available gain-mag) and lowest input return loss is obtained when both the input and output are conju-
18 gately matched to 50 ? . for instance at the input, when s = in * the highest gain with the best power transfer is obtained where s is the source reflection coeffi- cient presented to the input pin. for best noise, s = opt , where opt is the source reflection coefficient for optimum nf match and is determined empirically (experimentally). however, an input match where s = opt does not necessarily yield the best return loss nor the best gain. input match to allow flexibility for the de- signer, the lna is intended to be used with external matching network at the input. the noise performance of a two port can be determined if the values of the noise parameters f min , r n = r n /50 and opt are known (shown in the datasheet), where these parameters are given by: f 50 = f min + 4r n | s C opt | 2 (1 C | s | 2 ) |1 + opt | 2 r n = (f 50 C f min) | 1 + opt | 2 4 | opt | 2 opt = z opt C z o z opt + z o where f min is the minimum noise figure that is obtained when s = opt . r n is the noise resistance that indicates the sensitivity of the noise performance. s is the source reflection coeffi- cient presented to the input pin. opt is the source reflection coefficient for optimum nf match. any change in s affects the noise figure of our amplifier. to obtain the best noise figure, the following relation: s = opt must be satisfied. however, this might affect our return loss at the input because it creates more mismatch (at the input) and there is less power transfer to the lna. therefore the best solution should be the one that gives a reasonable input return loss with the best noise figure associated to it. the noise figure f of an amplifier is determined by the input match- ing circuit. the output matching does not affect the noise (has a significantly minimal effect on noise figure). to obtain the best noise match a simple two elements match is used at the input of the device. using the opt magnitude and phase at the frequency of interest, the noise match is done. the topology that has a capacitor to ground is ignored because it does not allow the input to be dc grounded as is required by the source bias method. therefore the series-l-shunt-l topology is used. the final values of the noise matching circuit (input match) was a result of some more empiri- cal tuning in the lab that was a compromise between the various important parameters. typical gain, noise and stability circles are shown in figures 17 C 20. most simulations were done using agilent-eesofs advanced design system (ads). stability a stable circuit is a circuit that does not oscillate. oscillation can take the form of spurious signal and noise generation. this usually results in changes in dc operating point (bias level fluctuates). the oscillations can be triggered by changes in the source (input match), load (output match), bias level and last but not least: improper grounding. design for stability the main potential for oscillation with the mga-71543 is improper grounding and/or improper rf bypass capacitors. any device with gain can be made to oscillate if feedback is added. proper grounding may be achieved by minimizing inductance paths to the ground plane. passive compo- nents should be chosen for high frequency operation. bias circuit self resonance due to inadequate bypass capacitors or inadequate grounding may cause high fre- quency, out of band, instability. smaller 0402 size bypass capaci- tors are recommended to mini- mize parasitic inductance and resonance of the bias circuit. statistical parameters several categories of parameters appear within the electrical specification portion of the mga-71543 datasheet. parameters may be described with values that are either minimum or maxi- mum, typical or standard deviations. the values for parameters are based on comprehensive product characterization data, in which automated measurements are made on a statistically significant number of parts taken from nonconsecutive process lots of semiconductor wafers. the data derived from product character- ization tends to be normally distributed, e.g. fits the standard bell curve. 68% 95% 99% parameter value mean ( ) (typical) -3 -2 -1 +1 +2 +3 figure 15. normal distribution curve.
19 parameters considered to be the most important to system perfor- mance are bounded by minimum or maximum values. for the mga-71543, these parameters are: v ref test , nf test , g atest , iip 3 test , and il test . each of the guaranteed parameters is 100% tested as part of the normal manufacturing and test process. values for most of the parameters in the table of electrical specifica- tions that are described by typical data are the mathematical mean ( ), of the normal distribution taken from the characterization data. for parameters where measurements or mathematical averaging may not be practical, such as s-parameters or noise parameters and the performance curves, the data represents a nominal part taken from the center of the characterization distribution. typical values are intended to be used as a basis for electrical design. to assist designers in optimizing not only the immediate amplifier circuit using the mga-71543, but to also evaluate and optimize tradeoffs that affect a complete wireless system, the standard deviation ( ) is provided for many of the electrical specifica- tion parameters (at 25 c). the standard deviation is a measure of the variability about the mean. it will be recalled that a normal distribution is completely de- scribed by the mean and standard deviation. standard statistics tables or calculations provide the probabil- ity of a parameter falling between any two values, usually symmetri- cally located about the mean. referring to figure 15 for example, the probability of a parameter being between 1 is 68.3%; between 2 is 95.4%; and between 3 is 99.7%. phase reference planes the positions of the reference plane used to specify s-parameters and noise parameters for the mga-71543 are shown in figure 16. as seen in the illustra- tion, the reference planes are located at the point where the package leads contact the test circuit. reference planes test circuit figure 16. phase reference planes. electrostatic sensitivity rfics are electro- static discharge (esd) sensitive devices. although the mga-71543 is robust in design, permanent damage may occur to these devices if they are subjected to high-energy electro- static discharges. electrostatic charges as high as several thou- sand volts (which readily accumu- late on the human body and on test equipment) can discharge without detection and may result in failure or degradation in performance and reliability. electronic devices may be sub- jected to esd damage in any of the following areas: storage & handling inspection assembly & testing in-circuit use the mga-71543 is an esd class 1 device. therefore, proper esd precautions are recommended when handling, inspecting, testing, assembling, and using these devices to avoid damage. any user-accessible points in wireless equipment (e.g., antenna or battery terminals) provide an opportunity for esd damage. for circuit applications in which the mga-71543 is used as an input or output stage with close cou- pling to an external antenna, the rfic should be protected from high voltage spikes due to human contact with the antenna. figure 17. in-circuit esd protection. a best practice, illustrated in figure17, is to place a shunt inductor (rfc) at the antenna connection to protect the receiver and transmitter circuits. it is often advantageous to integrate the rfic into a diplexer or t/r switch control circuitry.
20 figure 19. noise circles f = 1900 mhz, step size: 0.2 db. figure 20. gain circle f = 1900 mhz, step size: 1.0 db. figure 21. load and source stability circles. figure 18. gain, noise and stability circles. demonstration board figure 22. schematic diagram of evaluation board amplifier. 71 rf output c10 c11 c9 c8 l3 v d +3.0v 3 2 4 1 c4 c1 l1 l2 c5 c6 c2 sw2 sw1 r1 c7 r3 r2 r4 rf input noise circles nf = 1.55 db nf = 1.35 db nf = 1.15 db nf = 0.95 db nf = 0.75 db g = 14.8 db g = 15.8 db g = 16.8 db g = 17.8 db load unstable region source unstable source stability circle load stability circle source stable load stable region g = 18.8 db gain circles
21 figure 23. amplifier evaluation circuit with component designators. actual board size is 1.1 x 1.3 inches, 0.031 inches thick . agilent mga-71543 eval circuit c11 c10 l3 l1 l2 r4 r3 r2 r1 vc rev 2 eb 7/00 c5 v d gnd c2 c7 c8 c1 in c6 c9 c4 out board designation description part number package pcs-1900 800 mhz 71 dut [1] dut [1] mga-71543 sot-343 (4 lead sc-70 package) c1 100 pf 8.2 pf size 0402 c2, c5, c6, c7, c10 100 pf 100 pf size 0402 c9 47 pf 2.7 pf size 0402 c4, c8, c11 0.01 f 0.01 f size 0603 or 0402 l1 1.5 nh 18 nh toko ll1005 size 0402 l2 2.7 nh 33 nh toko ll1005 size 0402 l3 3.9 nh 33 nh toko ll1005 size 0402 r1 51 ? 51 ? size 0402 r2 115 ? 115 ? size 0805 (for 6ma bias) r4 / l4 0 ? (1900) 18 nh / ll1608-fh or 1005-fh size 0805 (jumper) / size 0603 (inductor) r3 60 ? 60 ? size 0805 (for 10ma bias) note 1: device under test table 1. component values for 1900 mhz and 800 mhz.
22 figure 24. system level overview of mga-71543 for handset designers. adc digital base-band processor analog front-end demodulator dual vco dual synthesizer adc dac rf control signal (pdm ) dac mga-71543 j10 these are the actual necessary components. the other connectors and board space are only for production. agilent technologies vcc vcc gnd gnd cell_lna pcs_lna pcs_lna pcs_out rf3 pcs_in rf1 j9 20.1 mm 0.791 in j8 c38 c36 blue2_lna rev2.1 l25 c12 c47 r24 r25 r37 l5 l6 c37 c9 j7 33.1 mm 1.303 in u2 u4 l7 r38 c8 r20 r21 c44 gnd cell_lna pcs_lna pcs_lna pcs_in c36 l25 c12 c47 r24 r16 r17 r18 r28 r25 r37 l5 l6 c37 c9 u2 u4 l7 r38 c8 r20 r21 c44 software controlling the switch manual switch control c38 figure 25. small size amplifier board with components for handset focussed designers.
23 4 layer board description part number package designation pcs-1900 u2 or 71 dut [1] mga-71543 sot-343 (sc-70) u4 or o3 switch b/n gnd resistors fdg6303n dual n-channel, digital fet c12 2.2 pf size 0402 c8, c47 0.033 f size 0402 c9, c44 100 pf size 0402 c38 not used c36, c37 27 pf size 0402 l5 3.9 nh toko ll1005 size 0402 l6 4.7 nh toko ll1005 size 0402 l7 1.5 nh toko ll1005 size 0402 l25 not used for tuning/not used here r38 51 ? size 0402 r20 36 ? size 0402 (for 16 ma bias) r21 56 ? size 0402 (for 11 ma bias) r24, r25 6 ? size 0402 r16, r17 0 ? size 0402 (jumper) r37 0 ? size 0402 (jumper) r18, r28 not used used with other fet switches note 1: device under test table 2. component values for 1900 mhz amplifier on smaller board. references 1. application note rlm020199, designing with the mga-72543 rfic amplifier/bypass switch. 2. g.d.vendelin, a.m.pavio and u.l.rhode, microwave circuit design using linear and nonlinear techniques.
j10 agilent technologies blue2_lna rev2.1 vcc vcc gnd gnd cell_lna pcs_lna pcs_lna pcs_out pcs_in j9 j8 c38 c36 l25 c12 c47 r24 r25 r37 l5 l6 c37 c9 j7 u2 u4 l7 r38 c8 r20 r21 c44 mga-71543 rf out switch & bias control u4 = fdg6303n dual n-channel, digital fet sc70-6 s1 d1 g2 s2 4 or 1* g1 d2 rf in c12 c9 out r38 r25 r24 r16 (0 ? jumper) r17 (0 ? jumper) fdg6303n selects current set by r20 vd = 3 volt r38 l7 l6 c36 mga-71543 r20 not used in this case. these could be used with other digital fet to select more discrete current values. r21 5 or 2 6 or 3 3 or 6 2 or 5 1 or 4* c37 c44 c47 c8 l5 in 4 or 1* 5 or 2 6 or 3 3 or 6 2 or 5 1 or 4* selects current set by r21 r28 (0 ? jumper) r18 (0 ? jumper) 03 figure 26. lna bypass circuit control on small test board. for product information and a complete list of agilent contacts and distributors, please go to our web site. www.agilent.com/semiconductors e-mail: semiconductorsupport@agilent.com data subject to change. copyright ? 2004 agilent technologies, inc. obsoletes 5988-4553en november 22, 2004 5989-1807en

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